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INTEGRATED CIRCUITS
DATA SHEET
TDA1300T; TDA1300TT Photodetector amplifiers and laser supplies
Preliminary specification Supersedes data of 1995 Nov 16 File under Integrated Circuits, IC01 1997 Jul 15
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
FEATURES * Six input buffer amplifiers with low-pass filtering with virtually no offset * HF data amplifier with a high or low gain mode * Two built-in equalizers for single or double speed mode ensuring high playability in both modes * Full automatic laser control including stabilization and an on/off switch and containing a separate supply VDDL for power reduction * Applicable with N-sub laser with N-sub or P-sub monitor diode * Adjustable laser bandwidth and laser switch-on current slope * Protection circuit preventing laser damage due to supply voltage dip * Optimized interconnect between pick-up detector and TDA1301 * Wide supply voltage range * Wide temperature range * Low power consumption. QUICK REFERENCE DATA SYMBOL VDD Gd(n) IO(d) B PARAMETER supply voltage CONDITIONS
TDA1300T; TDA1300TT
GENERAL DESCRIPTION The TDA1300 is an integrated data amplifier and laser supply for three beam pick-up detectors applied in a wide range of mechanisms for Compact Disc (CD) and read only optical systems. It offers 6 amplifiers which amplify and filter the focus and radial diode signals adequately and provides an equalized RF signal for single or double speed mode which can be switched by means of the speed control pin. The device can handle astigmatic, single Foucault and double Foucault detectors and is applicable with all N-sub lasers and N-sub or P-sub monitor diode units. After a single initial adjustment the circuit keeps control over the laser diode current resulting in a constant light output power independent of ageing. The chip is mounted in a small SO24 or TSSOP24 package enabling mounting close to the laser pick-up unit on the sledge.
MIN. 3
TYP. -
MAX. 5.5
UNIT V
Diode current amplifiers (n = 1 to 6) diode current gain diode offset current 3 dB bandwidth Ii(d) = 1.67 A fi = 0.3 MHz double speed 1.43 - 50 - - - 1.55 - - 1.67 100 - - - -100 nA kHz
RFE amplifier (built-in equalizer) td(eq) td(f) Laser supply Io(L) output current VDDL = 3 V - mA equalization delay flatness delay 320 5 ns ns
ORDERING INFORMATION TYPE NUMBER TDA1300T TDA1300TT PACKAGE NAME SO24 TSSOP24 DESCRIPTION plastic small outline package; 24 leads; body width 7.5 mm plastic thin shrink small outline package; 24 leads; body width 4.4 mm VERSION SOT137-1 SOT355-1
1997 Jul 15
2
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
BLOCK DIAGRAM
TDA1300T; TDA1300TT
handbook, full pagewidth
I6
23
I6in
6
1.5x
Id6out
2
O6
I5
20
I5in
5
1.5x
Id5out
5
O5
I4
24
I4in
4
1.5x
Id4out
1
O4
I3
22
I3in
3
1.5x
Id3out
3
O3
I2
19
I2in
2
1.5x
Id2out
6
O2
I1
21
I1in
1
1.5x
Id1out
4
O1
95, 120, 134 or 240 k Ii(central) I/V HG LS 11 12 -4
TDA1300T
9
RFE
10 ADJ 14 VDD IADJ (N-sub) or (P-sub) Vgap 8 16
RF
VDDL LO
MI
17
Vmon (N-sub) or Imon (P-sub)
OTA
ILO
VDD GND
18 15 SUPPLY ON/OFF 7 LDON
13 CL
MBG474
Fig.1 Block diagram.
1997 Jul 15
3
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
PINNING SYMBOL PIN O4 O6 O3 O1 O5 O2 LDON VDDL RFE RF HG LS CL ADJ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 DESCRIPTION current amplifier 4 output current amplifier 6 output current amplifier 3 output current amplifier 1 output current amplifier 5 output current amplifier 2 output control pin for switching the laser on and off laser supply voltage equalized output voltage of sum signal of amplifiers 1 to 4 unequalized output control pin for gain switch control pin for speed switch external capacitor P-sub monitor (if connected via resistor to GND); N-sub monitor (if connected to VDD) ground (substrate connection) laser output; current output monitor diode input (laser) supply photo detector input 2 (central) photo detector input 5 (satellite) photo detector input 1 (central) photo detector input 3 (central) photo detector input 6 (satellite) photo detector input 4 (central)
handbook, halfpage
TDA1300T; TDA1300TT
O4 O6 O3 O1 O5 O2 LDON VDDL RFE
1 2 3 4 5 6
24 I4 23 I6 22 I3 21 I1 20 I5 19 I2
TDA1300T
7 8 9 18 VDD 17 MI 16 LO 15 GND 14 ADJ 13 CL
MBG472
RF 10 HG 11 LS 12
GND LO MI VDD I2 I5 I1 I3 I6 I4
15 16 17 18 19 20 21 22 23 24
Fig.2 Pin configuration.
1997 Jul 15
4
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
FUNCTIONAL DESCRIPTION The TDA1300T; TDA1300TT can be divided into two main sections: * Laser control circuit section * Photo diode signal filter and amplification section. Laser control circuit section The main function of the laser control circuit is to control the laser diode current in order to achieve a constant light output power. This is done by monitoring the monitor diode. There is a fixed relation between light output power of the laser and the current of the monitor diode. The circuit can handle P-sub or N-sub monitor diodes. N-sub MONITOR In this event pin 14 (ADJ) must be connected to the positive supply voltage VDD to select the N-sub mode. With an adjustable resistor (RADJn) across the diode the monitor current can be adjusted (and so the laser light output power) if one knows that the control circuit keeps the monitor voltage Vmon at a constant level of approximately 150 mV. P-sub MONITOR In this event pin 14 (ADJ) is connected via resistor RADJp to ground. The P-sub mode is selected and pin 14 (ADJ) acts as reference band gap voltage, providing together with RADJp an adjustable current lADJ. Now the control circuit keeps the monitor current at a level which is 10lADJ. The circuit is built up in three parts: * The first part is the input stage which is able to switch between both modes (N-sub or P-sub). * The second part is the integrator part which makes use of an external capacitor CL. This capacitor has two different functions: - During switch-on of the laser current, it provides a current slope of typically: I o(L) 10 -6 ------------- ----------- (A/s) t CL - After switch-on it ensures that the bandwidth equals K x G ext x 90 x10 B P ------------------------------------------------- (Hz) C L x I mon in case of P-sub monitor or
-9
TDA1300T; TDA1300TT
R ADJn -9 B N --------------- K x G ext x 870 x10 (Hz) CL in case of N-sub monitor, where Gext represents the AC gain of an extra loop amplifier, if applied, and K = Imon/IL which is determined by the laser/monitor unit. Imon is the average current (pin 17) at typical light emission power of the laser diode. * The third part is the power output stage, its input being the integrator output signal. This stage has a separate supply voltage (VDDL), thereby offering the possibility of reduced power consumption by supplying this pin with the minimum voltage necessary. It also has a laser diode protection circuit which comes into action just before the driving output transistor will get saturated due to a large voltage dip on VDDL. Saturation will result in a lower current of the laser diode, which normally is followed immediately by an increment of the voltage of the external capacitor CL. This could cause damage to the laser diode at the end of the dip. The protection circuit prevents an increment of the capacitor voltage and thus offers full protection to the laser diode under these circumstances. Photo diode signal filter and amplification section This section has 6 identical current amplifiers. Amplifiers 1 to 4 are designed to amplify the focus photo diode signals. Each amplifier has two outputs: an LF output and an internal RF output. Amplifiers 5 and 6 are used for the radial photo diode currents and only have an LF output. All 6 output signals are low-pass filtered with a corner frequency at 69 kHz. The internal RF output signals are summed together and converted to a voltage afterwards by means of a selectable transresistance. This transresistance RRF can be changed between 140 k (3.3 V application) or 240 k (5 V application) in combination with the P-sub monitor. In the event of the N-sub monitor selection, RRF can be changed between 70 k (3.3 V application) and 120 k (5 V application). The RF signal is available directly at pin 10 but there is also an unfiltered signal available at pin 9. The used equalization filter has 2 different filter curves: * One for single-speed mode * One for double-speed mode.
1997 Jul 15
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Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
Table 1 Gain and monitor modes PIN MONITOR MODE HG 0 0 1(1) 1(1) Note 1. Logic 1 or not connected. Table 2 Speed and laser modes; note 1 ADJ RADJp connected to ground 1 RADJp connected to ground 1 P-sub N-sub P-sub N-sub RRF (k) 140
TDA1300T; TDA1300TT
INTENDED APPLICATION AREA
3.3 V 70 240 5V 120
MODE PIN DEFAULT VALUE(2) SINGLE LS LDON Notes 1. 1 = HIGH voltage (VDD); 0 = LOW voltage (GND); X = don't care. 2. If not connected. 3. X = don't care. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDD Pmax Tstg Tamb PARAMETER supply voltage maximum power dissipation storage temperature operating ambient temperature TDA1300T TDA1300TT Ves(1) electrostatic handling pin 16 electrostatic handling (all other pins) Notes 1. Classification A: human body model; C = 100 pF; R = 1500 ; Ves = 2000 V. Charge device model: C = 200 pF; L = 2.5 H; R = 0 ; Ves = 250 V. 2. Equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor. note 2 -40 -40 -2 -3 +85 +70 +2 +3 C C kV kV CONDITIONS - - -65 MIN. 8 300 +150 MAX. V mW C UNIT 1 1 1 X(3) SPEED DOUBLE 0 X(3) on X(3) 1 LASER off X(3) 0
1997 Jul 15
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Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
THERMAL CHARACTERISTICS SYMBOL Rth j-a TDA1300T TDA1300TT QUALITY SPECIFICATION PARAMETER thermal resistance from junction to ambient in free air
TDA1300T; TDA1300TT
VALUE 60 128
UNIT K/W K/W
In accordance with "SNW-FQ-611 part E". The numbers of the quality specification can be found in the "Quality Reference Handbook". The handbook can be ordered using the code 9397 750 00192. CHARACTERISTICS VDD = 3.3 V; VDDL = 2.5 V; Tamb = 25 C; RADJ = 48 k; HG = logic 1; LS = logic 1; with an external low-pass filter (Rext = 750 ; Cext = 47 pF) connected at the RFE output pin. SYMBOL Supply IDD VDD VDDL P supply current amplifier supply voltage laser control supply voltage power dissipation laser off; VDD = 3 V note 1 Ii(d) = 1.67 A Ii(d) = 1.67 A; Vo(d(n)) = 0 V; note 2 Ii(central) = Ii(satellite) = 0; note 3 Ii(d) = 1.67 A; Vo(d(n)) = 0 V Ii(d) = 1.67 A Ii(d) = 1.67 A; Vo(d(n)) = Vo(d(m)) laser off - 3 2.5 - - - - -0.2 1.43 - 500 50 - 7 - - 20 - 1 0.9 - 1.55 - - 68 - - 5.5 5.5 - mA V V mW A pA/Hz V V PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Diode current amplifiers (n = 1 to 6; m = 1 to 6) Ii(d) In(i)(eq) Vi(d) Vo(d) Gd(n) IO(d) Zo(d) B Gmm diode input current equivalent noise input current diode input voltage diode output voltage diode current gain diode offset current output impedance 3 dB bandwidth mismatch in gain between amplifiers 10 - - VDD - 1 1.67 100 - - 3 nA k kHz %
1997 Jul 15
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Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
SYMBOL PARAMETER CONDITIONS - 56 96 112 200 - - - - LS = 1; note 6 LS = 0; note 6 G/G BRF VIL VIH IIL Vo(L) Io(L) Io(L)/t data amplifier gain ratio note 6 unequalized output bandwidth Ii(d) = 1.67 A LOW level input voltage HIGH level input voltage LOW level input current - - 4.5 3 -0.2
TDA1300T; TDA1300TT
MIN.
TYP. - 84
MAX.
UNIT
Data amplifier; equalized single and double speed VO(RF) RRF DC output voltage transresistance Ii(central) = 0 N-sub monitor mode (low gain); note 3 N-sub monitor mode (high gain); note 3 P-sub monitor mode (low gain); note 4 P-sub monitor mode (high gain); note 4 VO(RF)(max) SRRF Zo(RF) td(eq) td(f) maximum output voltage RF slew rate RF output impedance equalization delay flatness delay (/) note 5 VSR = 1 V (peak-to-peak) fi = 1 MHz 0.3 70 120 140 240 - 6 100 320 10 5 6 5 - - - - - 3.4 V k k k k V V/s ns ns ns dB MHz
144 168 285 VDD - 1.2 - - - - - - -
Control pins LDON, LS and HG (with 47 k internal pull-up resistor) +0.5 VDD + 0.2 100 V V A VDD - 1 - -0.2 - CL = 1 nF (see Fig.8) -
Laser output output voltage output current slew rate output current Io(L) = 100 mA VDDL - 0.7 V -100 - mA mA/s
Monitor diode input Vref IL Vi(mon) Ii(mon) T RSref virtual reference voltage leakage current monitor input voltage monitor input current reference temperature drift reference supply rejection N-sub monitor mode N-sub monitor mode P-sub monitor mode P-sub monitor mode N-sub monitor mode N-sub monitor mode 130 - - - - - 150 1 - 40 - 170 - 2 - 1 mV nA V mA ppm %
VDD - 0.7 -
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Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
SYMBOL PARAMETER CONDITIONS
TDA1300T; TDA1300TT
MIN.
TYP.
MAX.
UNIT
Reference source VADJ and laser adjustment current IADJ Vref T RSref IADJ Zi M reference voltage reference temperature drift reference supply rejection adjustment current input impedance multiplying factor (Imon/IADJ) RADJ = 5.6 k RADJ = 4.8 k RADJ = 48 k 1.15 - - - - - 1.24 40 - - 1 10 1.31 - 1 200 - - mV ppm % A k -
Notes to the characteristics 1. The maximum input current is defined as the current in which the gain Gd(n) reaches its minimum. Increasing the supply voltage to VDD = 5 V increases the maximum input current (see also Figs 4 and 5). 2. The gain increases if a larger supply voltage is used (see Fig.6). 3. Transresistance of 70 k and 120 k (typical) is only available in N-sub monitor mode (see Table 1). 4. Transresistance of 140 k and 240 k (typical) is only available in P-sub monitor mode (see Table 1). 5. Output voltage swing will be: VO(RF)(swing) = VO(RF)(max) - VO(RF)(p-p). 6. For single speed the data amplifier gain ratio is defined as gain difference between 1 MHz and 100 kHz, while the flatness delay is defined up to 1 MHz (see Fig.7). For double speed the data amplifier gain ratio is defined as gain difference between 2 MHz and 200 kHz, while the flatness delay is defined up to 2 MHz.
1997 Jul 15
9
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
Transfer functions; see Fig.6
TDA1300T; TDA1300TT
The equalized amplifier including Cext and Rext has the following transfer functions, where `RFE' refers to equalized output only and `RF' refers to equalized and not equalized outputs. FOR SINGLE SPEED (SP = LOGIC 1) 2 2 V RFE 1 1 1 - ks os ------------------ = R RF x ------------------------------------------------------------------------ x ---------------------- x ----------------------------------------2 2 1 + s 1 1 + sR ext x C ext I i(central) 1+1Qxs +s
os os
(1)
FOR DOUBLE SPEED (SP = LOGIC 0) 2 2 V RFE 1 1 - ks os ------------------ = R RF x ------------------------------------------------------------------------ x ----------------------------------------2 2 1 + sR ext x C ext I i(central) 1+1Qxs +s
od od
(2)
The denominator forms the denominator of a Bessel low-pass filter. Symbols used in equations (1) and (2) are explained in Table 3. Table 3 Transresistance SYMBOL k os/1 Q od = 2 x os RRF Rext Cext DESCRIPTION internally defined internally defined internally defined internally defined see Chapter "Characteristics" external resistor external capacitor 4 1.094 0.691 17.6 x 10-6 - 750 47 pF rad/s TYP. UNIT
1997 Jul 15
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Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
TDA1300T; TDA1300TT
handbook, full pagewidth
24
MBG471
Ii(max) (A) 20
16
12
8 3 3.5 4 4.5 5 VDD (V) 5.5
= test limit.
Fig.3 Maximum input current as a function of VDD.
handbook, full pagewidth
40
MBG469
Io (A) 30
(1) (2)
(3)
20
10
0 0 = test limit. (1) Gd(n) = 1.43. (2) VDD = 5.5 V. (3) VDD = 3.4 V. 10 20 30 Ii (A) 40
Fig.4 Output current as a function of input current.
1997 Jul 15
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Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
TDA1300T; TDA1300TT
handbook, full pagewidth
1.75
MBG470
Io/Ii (mA) 1.65
1.55
1.45
1.35 3 = test limit. 3.5 4 4.5 5 VDD (V) 5.5
Fig.5 Gain as a function of VDD.
handbook, full pagewidth
9.0
MBG468
450 td (ns) 400
(1)
gain (dB) 7.0
5.0
350
(2)
3.0
(1) (2)
300
1.0
250
-1.0 10 (1) Single speed. (2) Double speed.
10 2
10 3
f (kHz)
200 10 4
Fig.6 Transfer of equalizer.
1997 Jul 15
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Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
INTERNAL PIN CONFIGURATION
TDA1300T; TDA1300TT
dbook, full pagewidth
VDD VDD 47 k GND LDON HG LS CL
VDD
VDD
from LDON circuitry
VDD I1 I2 I3 I4 I5 I6 O1 O2 O3 O4 O5 O6
VDD
VDD
RF RFE
VDDL
VDD
VDD
P-sub mode ADJ LO MI
VDD N-sub mode MI
MBG475
Fig.7 Equivalent internal pin diagrams.
1997 Jul 15
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clk VDDA VDD NRST OTD PLL left right DECODER (SAA7345) O1 D1 D2 D3 D4 R1 XTLR O6 R2 VRL VRH LDON LDON SICL SIDA SILD VSSK clk VDD RA FO SL VSSD DISPLAY PROCESSOR KEYBORD DISPLAY end_stop_switch O1 O2 focus actuator POWER AMPLIFIER (TDA7072/7073) radial actuator O3 O4 O5 O6 GND TS2 TDA1301 TS1 MOTOR CONTROL SUBCODE DECODER POWER AMP DIGITAL SERVO IC to spindle motor XTLO XTLI O2 O3 O4 O5 CLO VDDA VDDD VDDD
TDA1300T; TDA1300TT
Preliminary specification
Fig.8 Application diagram for CD player.
handbook, full pagewidth
1997 Jul 15
N-sub monitor configuration
HG LS
RF/ RFE
photodiodes
I1
Philips Semiconductors
I2
I3
APPLICATION INFORMATION
I4
I5
DIODE AMPLIFIER AND LASER SUPPLY
I6
TDA1300
mon
MI
LO
la
VDDL
CL
ADJ
Photodetector amplifiers and laser supplies
RADJn
1 nF
CL
2.5 to 5 V
VDD
P-sub monitor configuration
14
sledge
MBG473
HG LS
RF/ RFE
photodiodes
I1
I2
I3
I4
I5
DIODE AMPLIFIER AND LASER SUPPLY
I6
TDA1300 LDON
mon
MI
LO GND
la
VDDL 1 nF
CL
ADJ
CL
2.5 to 5 V
RADJp
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
PACKAGE OUTLINES SO24: plastic small outline package; 24 leads; body width 7.5 mm
TDA1300T; TDA1300TT
SOT137-1
D
E
A X
c y HE vMA
Z 24 13
Q A2 A1 pin 1 index Lp L 1 e bp 12 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 15.6 15.2 0.61 0.60 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
8o 0o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT137-1 REFERENCES IEC 075E05 JEDEC MS-013AD EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-24 97-05-22
1997 Jul 15
15
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
TDA1300T; TDA1300TT
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm
SOT355-1
D
E
A
X
c y HE vMA
Z
24
13
Q A2 pin 1 index A1 (A 3) A
Lp L
1
e bp
12
wM detail X
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.10 A1 0.15 0.05 A2 0.95 0.80 A3 0.25 bp 0.30 0.19 c 0.2 0.1 D (1) 7.9 7.7 E (2) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.50 Q 0.4 0.3 v 0.2 w 0.13 y 0.1 Z (1) 0.5 0.2 8o 0o
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT355-1 REFERENCES IEC JEDEC MO-153AD EIAJ EUROPEAN PROJECTION ISSUE DATE 93-06-16 95-02-04
1997 Jul 15
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Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO and TSSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering SO Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. TSSOP
TDA1300T; TDA1300TT
Wave soldering is not recommended for TSSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, do not consider wave soldering TSSOP packages with 48 leads or more, that is TSSOP48 (SOT362-1) and TSSOP56 (SOT364-1). METHOD (SO AND TSSOP) During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
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Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TDA1300T; TDA1300TT
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser supplies
NOTES
TDA1300T; TDA1300TT
1997 Jul 15
19
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547027/50/03/pp20
Date of release: 1997 Jul 15
Document order number:
9397 750 01673

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